High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero

DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

文件：108.31 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

DESCRIPTION TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off •

文件：107.73 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

DESCRIPTION TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

文件：108.27 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

TUNDRA
BGA

TUNDRA

上传：深圳市汇莱威科技有限公司

TUNDRA
BGA

TUNDRA

上传：深圳市宇创芯科技有限公司