TSHG5510_V02资料使用说明书行情报价威世-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TSHG5510_V02	文件：92.96 Kbytes Page：5 Pages	High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • 文件：92.96 Kbytes 页数：5 Pages	VishayVishay Siliconix 威世	Vishay
TSFF5510_V02	文件：95.72 Kbytes Page：5 Pages	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • 文件：95.72 Kbytes 页数：5 Pages	VishayVishay Siliconix 威世	Vishay
TSI106G-66JB	文件：0 bytes Page：0 Pages	TUNDRA BGA	TUNDRA 上传：深圳市汇莱威科技有限公司	TUNDRA
TSI107C-100JE	文件：0 bytes Page：0 Pages	TUNDRA BGA	TUNDRA 上传：深圳市宇创芯科技有限公司	TUNDRA
TSI107D-66JE	文件：0 bytes Page：0 Pages	TUNDRA BGA	TUNDRA 上传：深圳市汇莱威科技有限公司	TUNDRA

更多TSHG5510_V02供应商更新时间2025-10-10 9:01:00