High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3 max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shutdown

文件：4.49268 Mbytes 页数：50 Pages

STMICROELECTRONICS

意法半导体

丝印：2012HY；Package：SO8；High temperature, high voltage, precision, bidirectional current sense amplifiers

Features • Wide common mode voltage: - 20 to 70 V • Offset voltage: ± 200 μV max. • 2.7 to 5.5 V supply voltage • Different gain available – TSC2010H: 20 V/V – TSC2011H: 60 V/V – TSC2012H: 100 V/V • Gain error: 0.3% max. • Offset drift: 5 μV/°C max. • Quiescent current: 20 μA in shut

文件：3.11587 Mbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

文件：67.28 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

NECs 1/4W SINGLE CONTROL L-BAND SPDT SWITCH

DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in

文件：120.9 Kbytes 页数：7 Pages

NEC

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NECs 쩌 W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is hous

文件：306 Kbytes 页数：7 Pages

NEC

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