SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

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STMICROELECTRONICS

意法半导体

NECs 1/4W SINGLE CONTROL L-BAND SPDT SWITCH

DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is housed in

文件：120.9 Kbytes 页数：7 Pages

NEC

瑞萨

NECs 쩌 W SINGLE CONTROL L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation. This device is hous

文件：306 Kbytes 页数：7 Pages

NEC

瑞萨

60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 39mV at 5A • 5.5 am

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ZETEX