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UPG2012TKRF/IF射频/中频RFID的射频开关规格书PDF中文资料

厂商型号	UPG2012TK
参数属性	UPG2012TK 封装/外壳为6-SMD，扁平引线；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为RF/IF射频/中频RFID的射频开关；产品描述：IC RF SWITCH SPDT 2.5GHZ 6MINIM
功能描述	NECs 쩌 W SINGLE CONTROL L, S-BAND SPDT SWITCH
封装外壳	6-SMD，扁平引线
文件大小	306 Kbytes
页面数量	7 页
生产厂商	Renesas Electronics America
企业简称	NEC【瑞萨】
中文名称	日本瑞萨电子株式会社官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-24 12:21:00
人工找货	UPG2012TK价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

The µPG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.

This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.

This device is housed in a 6-pin lead-less minimold package (1511). And this package is able to high-density surface mounting.

FEATURES

• Supply voltage : VDD = 2.7 to 3.0 V (2.8 V TYP.)

• Switch control voltage : Vcont (H) = 2.7 to 3.0 V (2.8 V TYP.)

: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)

• Low insertion loss : LINS1 = 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: LINS2 = 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: LINS3 = 0.30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)

• High isolation : ISL1 = 30 dB TYP. @ f = 0.5 to 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

ISL2 = 30 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V (Reference value)

• High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)

APPLICATIONS

• L-band digital cellular or cordless telephone

• PCS, W-LAN, WLL and BluetoothTM etc.