TSC2012IYDT说明书PDF资料批发供应-114ic电子网

首页 >TSC2012IYDT>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
TSC2012IYDT	文件：1.86858 Mbytes Page：54 Pages	High voltage, precision, bidirectional current sense amplifiers	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
TSC2012IYST	文件：1.86858 Mbytes Page：54 Pages	Highvoltage,precision,bidirectionalcurrentsenseamplifiers	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
TTC-2012	文件：141.69 Kbytes Page：1 Pages	UltraWidebandAudioTransformers	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
TW2012	文件：268.9 Kbytes Page：2 Pages	TW2010/TW2012MagnetMountGPSL1Antenna	TALLYSMAN Tallysman Wireless Inc.	TALLYSMAN
TYP2012	文件：67.28 Kbytes Page：5 Pages	SCRFOROVERVOLTAGEPROTECTION DESCRIPTION TheTYP212--->1012Familyuseshighperformanceglasspassivatedchipstechnology.TheseSiliconControlledRectifiersaredesignedforovervoltageprotectionincrowbarcircuitsapplication. FEATURES .HIGHSURGECURRENTCAPABILITY .HIGHdI/dtRATING .HIGHSTABILIT	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
TZ2012A	文件：420.95 Kbytes Page：8 Pages	CrystalUnitSMD3.2x2.516.00MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan	TAI-SAW TAI-SAW TECHNOLOGY CO., LTD.	TAI-SAW
TZ2012B	文件：417.09 Kbytes Page：8 Pages	CrystalUnitSMD3.2x2.516MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount3.2mmx2.5mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan	TAI-SAW TAI-SAW TECHNOLOGY CO., LTD.	TAI-SAW
UB2012	文件：284.47 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTIC	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
UB2012	文件：263.06 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLEANDTWO-CELLLITHIUM-IONANDLITHIUM-POLYMER	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
UB2012	文件：320.68 Kbytes Page：17 Pages	ADVANCEDLINEARCHARGEMANAGEMENTICFORSINGLE DESCRIPTION UTCUB2012isdesignedforportableelectronicswithlowercost.Itsadvantagesofhigh-accuracyvoltage/currentregulation,chargingstatusindication,temperaturemonitoring,andautomaticcharge-ratecompensation. FEATURES *IdealforSingle4.1V,4.2VandDual-Cell8.2V,8.4VLi-I	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
ULN2012	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
ULN2012	文件：186.29 Kbytes Page：6 Pages	HIGHVOLTAGEHIGHCURRENTDARLINGTONARRAY	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
ULN2012A	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
ULN2012L	文件：749.9 Kbytes Page：8 Pages	HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS [SPRAGUE] HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
UPG2012TB	文件：266.93 Kbytes Page：8 Pages	L-BANDSPDTSWITCH DESCRIPTION ThePG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation.Thisdeviceishousedina	CEL California Eastern Laboratories	CEL
UPG2012TB	文件：72.47 Kbytes Page：9 Pages	L-BANDSPDTSWITCH	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TB	文件：120.9 Kbytes Page：7 Pages	NECs1/4WSINGLECONTROLL-BANDSPDTSWITCH DESCRIPTION TheµPG2012TBisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishousedin	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TB	文件：325.3 Kbytes Page：11 Pages	GaAsINTEGRATEDCIRCUIT FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPG2012TK	文件：306 Kbytes Page：7 Pages	NECs쩌WSINGLECONTROLL,S-BANDSPDTSWITCH DESCRIPTION TheµPG2012TKisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishous	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPG2012TK	文件：109.58 Kbytes Page：9 Pages	L-BANDSPDTSWITCH	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

12 3 >>>

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	TSC2012IYDT	STMicroelectronics	24+	8-SOIC(0.154,3.90mm 宽)	25000	in stock线性IC-原装正品	询价
深圳市高捷芯城科技有限公司	TSC2012IYDT	ST(意法半导体)	23+	SOP-8	2669	深耕行业12年,可提供技术支持。	询价
深圳市亿顺芯科技有限公司	TSC2012IYDT	STMicroelectronics	2021+	5.5 V	57500	科研单位合格供应商!现货库存	询价
深圳市冠亿通科技有限公司	TSC2012IYDT	STMicr	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
万三科技(深圳)有限公司	TSC2012IYDT	STM(STMicroelectronics)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
北京京北通宇电子元件有限公司	TSC2012IYDT	STMICROELECTRONICS	23+	NA	1000	电流传感放大器	询价
深圳市明嘉莱科技有限公司	TSC2012IYDT	ST/意法	20+	SMD	880000	明嘉莱只做原装正品现货	询价
上海皇华信息科技有限公司	TSC2012IYDT	ST			3858	只做正品	询价
深圳市弘扬芯城科技有限公司	TSC2012IYDT	ST(意法半导体)	23+	SOIC8	6000	诚信服务，绝对原装原盘	询价
现代芯城（深圳）科技有限公司	TSC2012IYDT		24+	N/A	70000	一级代理-主营优势-实惠价格-不悔选择	询价

更多TSC2012IYDT供应商更新时间2024-9-24 14:13:00

相关规格书

相关库存