丝印：S4E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 12 nC (typ.) (4) Low reverse current: IR = 0.6 μA (typ.

文件：387.56 Kbytes 页数：7 Pages

TOSHIBA

东芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

SiC Schottky Barrier Diode

文件：262.55 Kbytes 页数：6 Pages

TOSHIBA

东芝

SOP

TI

德州仪器

上传：深圳市龙腾翼电子科技有限公司

QFP128

REALTEK

瑞昱

上传：深圳市龙腾翼电子科技有限公司