丝印：S3E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 页数：7 Pages

TOSHIBA

东芝

SiC Schottky barrier diode

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

Toshiba

东芝

Medium permeability High Curie Temperature High Saturation Flux Superior EMI ferrite material

文件：664.71 Kbytes 页数：8 Pages

FERROXCUBE

SINGLE DIGIT LED DISPLAY (0.39 Inch)

文件：132.96 Kbytes 页数：9 Pages

LIGITEK

立碁电子

HIGH-LUMINOSITY LED LAMP

Chip LED / LED Lamp

文件：1.50176 Mbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商