TPN14006NH

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.5nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=11mΩ(typ.) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (5)Enhancement

TPN19008QM

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.5nC(typ.) (3)Smalloutputcharge:Qoss=16.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=14.7mΩ(typ.)(V

TPN1R603PL

Marking：1R603PL；Package：TSON；MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=11nC(typ.) (3)Smalloutputcharge:Qoss=23nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.)(VGS=10V)

TPN2010FNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=168mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (

TPN2R304PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=10.8nC(typ.) (3)Smalloutputcharge:Qoss=27nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.8mΩ(typ.)(VGS=10

TPN2R703NL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (

TPN2R805PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=12nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.2mΩ(typ.)(VGS=10V)

TPN2R903PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.6nC(typ.) (3)Smalloutputcharge:Qoss=17nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.1mΩ(typ.)(VGS=10V

TPN30008NH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=4.1nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=25mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10

TPN3021

Tripolar overvoltage protection for network interfaces

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci