TPN

SPST THT Tactile Switches with LED

TPN-104A-H01-L2000-I100

Temperature Detection – Insertion Probe

Features ■Insertionprobeforthefoodindustry ■Todeterminetheinternaltemperature duringthecookingprocess ■Temperatureresistantupto300°C ■Plastichandle,suitableforfoodcontact ■ProbedimensionsØ4×100mm ■Pt100sensor,classA,4-wireconnection Functionalprinciple

TPN11003NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.0nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=12.6mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancement

TPN11006NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TPN11006PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.8nC(typ.) (3)Smalloutputcharge:Qoss=14.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=8.8mΩ(typ.)(VGS=10

TPN1110ENH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TPN11NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.0nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=12.6mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancement

TPN12008QM

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.5nC(typ.) (3)Smalloutputcharge:Qoss=21.1nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VG

TPN1200APL

Silicon N-channel MOS (U-MOS??H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=7.5nC(typ.) (3)Smalloutputcharge:Qoss=24nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.8mΩ(typ.)(VGS

TPN13008NH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=6.7nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=10.8mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=1