MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 10.8 nC (typ.) (3) Small output charge: Qoss = 27 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.8 mΩ (typ.) (VGS = 10

文件：483 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅨ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 100 A \nPower Dissipation PD 104 W \nDrain-Source voltage VDSS 40 V ;

Toshiba

东芝

BGA

TOSHIBA

东芝

上传：深圳市联世界科技有限公司

SOT23-6

3PEAK

思瑞浦

上传：深圳市中远芯科技有限公司

DIP14

ALLEGRO/雅丽高

上传：深圳市澳亿芯电子科技有限公司