MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 5.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (

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TOSHIBA

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Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 90 A \nPower Dissipation PD 42 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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BGA

TOSHIBA

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SOT23-6

3PEAK

思瑞浦

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DIP14

ALLEGRO/雅丽高

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