Chassis Mounting Non-inductive Flat Type High Power resistors

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丝印：TPM2001NY3；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V Ib=10A @Ves = 10V Rosion) £1.35Q @Ves = 10V SOT-223 package.

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丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65

Features Vbs =200V = 6.0A Roson)

文件：1.04375 Mbytes 页数：3 Pages

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丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

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40-V 7-Ch Low-side Driver Array

Features • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Output Leakage

文件：2.01085 Mbytes 页数：16 Pages

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40-V 7-Ch Low-side Driver Array

Features • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Output Leakage

文件：2.01085 Mbytes 页数：16 Pages

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思瑞浦

40-V 7-Ch Low-side Driver Array

Features • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Output Leakage

文件：2.01085 Mbytes 页数：16 Pages

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思瑞浦

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A + Reson $0650 @Ves=10V

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丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：994.63 Kbytes 页数：3 Pages

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丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.650

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：994.89 Kbytes 页数：3 Pages

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