丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features | + Vos=200v © os 60A © Rosow 50650 @Vos=10V

文件：998.31 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：1.00039 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.650

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：1.00129 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：TPM2007NK3；Package：TO-252-3L；200V N-Channel Enhancement Mode Power MOSFET

Features Vos = 200V,lp =5.5A Ros(on)

文件：2.08128 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.650)

Application Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics. Logic Level Shift

文件：998.4 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子

50-V 7-Channel Low-Side Driver Array

The TPM2003C is a high-voltage, high-current Darlington bipolar junction transistor array. This device consists of seven channels of low-side Darlington NPN transistors with high-voltage outputs and free-wheeling diodes for inductive loads.\n\nThe maximum drain-current rating of a single Darlington

3PEAK

思瑞浦

N-Channel MOSFET

Techpublic

台舟电子

200V N-Channel Enhancement Mode Power MOSFET

Techpublic

台舟电子