TPM2003中文资料思瑞浦数据手册PDF规格书

特性 Features

• 7-channel Darlington Array

• 500-mA Rated Drain Current (Per Channel)

• Very Low Output Leakage < 10 nA Per Channel

• Power Efficient with Low RDS-on

• Extended Temperature Range: TA = –40°C to 125°C

• High-Voltage Outputs: 40 V

• Compatible with 1.8-V to 5.0-V Logic Interface

• Integrated Free-wheeling Diodes for Inductive Load

• Improved Noise-immunity with integrated RC filter

• Enhanced ESD Protection Exceeds JESD 22 – 2.5-kV

HBM, 1.5-kV CDM

• Available in SOP16 and TSSOP16 Packages

Applications

• Inductive Loads

– Relays

– Unipolar Stepper & Brushed DC Motors

– Solenoids & Valves

• LED Indicators

• Logic Level Shifting

• Gate & IGBT Drive

描述 Description

The TPM2003 is a high-voltage, high-current NMOS

transistor array. This device consists of seven channels of

low-side NMOS transistors with high-voltage outputs and

free-wheeling diodes for inductive loads.

The maximum drain-current rating of a single NMOS

channel is 500 mA. The device supports a wide I/O voltage

range from 1.8 V to 30 V. The transistors can drive

in parallel for higher current capability. Enhanced ESD

performance enhances system-level reliability.

The TPM2003 can replace traditional Bipolar Darlington

arrays with better thermal efficiency and reliability.