AOZ8006

Ultra-LowCapacitanceTVSDiodeArray

GeneralDescription TheAOZ8006isatransientvoltagesuppressorarraydesignedtoprotecthighspeeddatalinessuchasHDMIandGigabitEthernetfromdamagingESDevents. Thisdeviceincorporateseightsurgerated,lowcapacitancesteeringdiodesandaTVSinasinglepackage.Duringtransien

AOZ8006FI

PlasticEncapsulatedDevice

ASIMM8006

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTION: TheASIMM8006isDesignedforHighFrequencyLowNoiseAmplifierandOscillatorApplications.

BGU8006

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BY8006

Fasthigh-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEATURES

BY8006

FASTRECOVERYHIGHVOLTAGERECTIFIERDIODE

PRV:8000Volts IF(AV):10mA FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree MECHANICALDATA: *Case:DO-41Moldedplastic *Epoxy:UL94V-Orateflameretardant *Lead:Axia

CU8006

4-portUSB3.0hub

EH8006ZI

3PHASEBRIDGEMODULES

ESD8006

ESDProtectionDiode

ESD8006MUTAG

ESDProtectionDiode