Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)

Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON)= 8.0 mΩ(typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS= −10 μA (

文件：188.99 Kbytes 页数：7 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：991.33 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET (P-ch single)

Application Scope：Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -11 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

东芝