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TPC8110

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=17mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=16S(typ.) •Lowleakagecurrent:IDSS=−10µA(ma

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8110

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8110

P-Channel 40 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •POL

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

TPC8111

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA(

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8112

Field Effect Transistor Silicon P Channel MOS Type(U-MOS III)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=5.0mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=31S(typ.) •Lowleakagecurrent:IDS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8113

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10µA(max

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8114

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=3.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=47S(typ.) •Lowleakagecurrent:IDSS=−10µA(

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8115

FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSIV)

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=6.5mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=40S(typ.) •Lowleakagecurrent:IDSS=−10μA(m

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8115

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPC8116-H

High Efficiency DC竊뢈C Converter Applications

HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications CCFLInverterApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=9.7nC(typ.) •Lowdrain-sourceON-res

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

详细参数

  • 型号:

    TPC811

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
24+
SOP8
8950
BOM配单专家,发货快,价格低
询价
TOSHIBA
24+
QR
9800
一级代理/全新原装现货/长期供应!
询价
TOSHIBA/东芝
2019+
SOP8
6700
原厂渠道 可含税出货
询价
TOSHIBA/东芝
24+
N/P
16500
代理授权直销,原装现货,假一罚十,长期稳定供应
询价
TOSHIBA/东芝
19+/20+
SOP-8
8015
询价
TPC
23+
SOP8
5700
绝对全新原装!现货!特价!请放心订购!
询价
TOSHIBA
11+
SOP-8
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
23+
SOP8
9526
询价
TOSHIBA
23+
SOIC-8
36273
原装正品,假一罚十
询价
TOSHIBA
2020+
SOP8
1430
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多TPC811供应商 更新时间2025-5-18 16:36:00