650V SuperGaN® GaN FET in TO-220 (source tab)

Description The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.05158 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

文件：1.02341 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

文件：1.02341 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® FET in PQFN (source tab)

Description The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.09592 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.08809 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection ■ Very low QRR ■ Reduced crossover loss ■ RoHS compliant and H

文件：873.61 Kbytes 页数：15 Pages

RENESAS

瑞萨

650V SuperGaN® GaN FET in PQFN (source tab)

■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection ■ Very low QRR ■ Reduced crossover loss ■ RoHS compliant and H

文件：873.61 Kbytes 页数：15 Pages

RENESAS

瑞萨

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.08809 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® FET in PQFN (source tab)

Description The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.09592 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform use

文件：1.06464 Mbytes 页数：12 Pages

TRANSPHORM