Description

The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN)

FET is a normally-off device using Transphorm’s Gen IV

platform. It combines a state-of-the-art high voltage GaN

HEMT with a low voltage silicon MOSFET to offer superior

reliability and performance.

The Gen IV SuperGaN® platform uses advanced epi and

patented design technologies to simplify manufacturability

while improving efficiency over silicon via lower gate charge,

output capacitance, crossover loss, and reverse recovery

Features

• Gen IV technology

• JEDEC-qualified GaN technology

• Dynamic RDS(on)eff production tested

• Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

• Very low QRR

• Reduced crossover loss

• RoHS compliant and Halogen-free packaging

Applications

• Consumer

• Power adapters

• Low power SMPS

• Lighting

charge.