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型号	下载订购	功能描述	制造商上传企业	LOGO
TP65H070G4LSG	文件：1.03044 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4LSG 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented 文件：1.03044 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4LSGB	文件：1.0638 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and pate 文件：1.0638 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4LSGB-TR	文件：1.0638 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and pate 文件：1.0638 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4LSG-TR	文件：1.03044 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4LSG 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented 文件：1.03044 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4PS	文件：1.10614 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4PS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented d 文件：1.10614 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4QS	文件：2.093889 Mbytes Page：13 Pages	650V SuperGaN® FET in TOLL (source tab) Description The TP65H070G4QS 650V, 72 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses 文件：2.093889 Mbytes 页数：13 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4QS-TR	文件：2.093889 Mbytes Page：13 Pages	650V SuperGaN® FET in TOLL (source tab) Description The TP65H070G4QS 650V, 72 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses 文件：2.093889 Mbytes 页数：13 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4RS	文件：1.05448 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented d 文件：1.05448 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070G4RS-TR	文件：1.05448 Mbytes Page：12 Pages	650V SuperGaN® GaN FET in PQFN (source tab) Description The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented d 文件：1.05448 Mbytes 页数：12 Pages	TRANSPHORM	TRANSPHORM
TP65H070L	文件：1.17705 Mbytes Page：13 Pages	650V GaN FET PQFN Series Description The TP65H070L Series 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Features • JEDEC qualified GaN technology • Dynami 文件：1.17705 Mbytes 页数：13 Pages	TRANSPHORM	TRANSPHORM

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技术参数

Channel：
1
Supply Voltage(Min)：
2.1
Supply Voltage(Max)：
6
Iq per channel (Max)(μA)：
130
GBW (Typ) (MHz)：
1.3
Slew Rate (Typ)(V/μs)：
0.7
Rail-Rail In：
Yes
Rail-Rail Out：
Yes
Ishort(Typ) (mA)：
50
Vos(Max)(mV)：
3
Offset Drift (Typ)(μV/°C)：
1
Ib(typ)(pA)：
1
Vn (Typ) (nV/rtHz)：
27
Peak Noise at 0.1 to 10Hz(μVpp)：
8
Shutdown/Disable：
/
Operating Temperature Range(°C)：
-40 to 125
Feature：
/
Package：
SOT23-5

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤科源兴科技有限公司	TP6911SB101W	TENX	13+	LQFP-48	1339	原装分销	询价
谛辉(北京/上海/青岛 )电子科技有限公司	TP6720DQ	TPPRO	25+	QFP	18000	原厂直接发货进口原装	询价
深圳市勤思达科技有限公司	TP6N60	ON	11+	TO220	8000	全新原装,绝对正品现货供应	询价
深圳市一线半导体有限公司	TP60FB	TI	24+	BGA	2500	自己现货	询价
深圳市卓越微芯电子有限公司	TP6312F	TOPRO	25+	QFP	110	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市豪迈兴电子有限公司	TP6311Q	TOPRO	24+	QFP	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市欧立现代科技有限公司	TP621-1	TOSHIBA	24+	SOP-4	3500	原装现货,可开13%税票	询价
千层芯半导体(深圳)有限公司	TP6911SB28H-102G	TENX	24+	HSOP28	2500	原装现货热卖	询价
深圳市凌旭科技有限公司	TP6312F	TOPRO	2016+	LQFP44	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市鹏和科技有限公司	TP6901SBM05	N/A	24+	SSOP	5000	只做原装公司现货	询价

更多TP6供应商更新时间2026-1-21 9:01:00

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