MINIATURE SMD PROGRAMMABLE OSCILLATOR (5.0 x 3.2 x 1.3mm)

FEATURES: • CMOS PROGRAMMABLE OSCILLATOR • MINITURE SMD PACKAGE WITH CMOS OUTPUT

文件：297.6 Kbytes 页数：1 Pages

Transko

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：306.65 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：306.65 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：306.65 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：306.65 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：306.65 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：434.9 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：434.9 Kbytes 页数：2 Pages

SUTEX