P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：434.9 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

文件：396.7 Kbytes 页数：3 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

文件：737.51 Kbytes 页数：12 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FET

文件：582.1 Kbytes 页数：3 Pages

SUTEX

P-Channel Enhancement Mode MOSFET

TP5335 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and High input impedance and high gain \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nFree from secondary breakdown;

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：434.9 Kbytes 页数：2 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件：382.42 Kbytes 页数：14 Pages

Microchip

微芯科技