P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

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Microchip

微芯科技

INFRARED RECEIVER MODULE

Description The MIM-5xx5K1F is miniaturized infrared receivers for remote control and other applications requiring improved ambient light rejection. The separate PIN diode and preamplifier IC are assembled on a single leadframe. The epoxy package contains a special IR filter. This module has e

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UOT

东贝光电

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：684.25 Kbytes 页数：5 Pages

SUTEX