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TP5322N8

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件:306.65 Kbytes 页数:2 Pages

SUTEX

TP5322N8-G

P-Channel Enhancement-Mode Vertical DMOS FET

General Description These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件:306.65 Kbytes 页数:2 Pages

SUTEX

TP5335

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件:434.9 Kbytes 页数:2 Pages

SUTEX

TP5335

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件:382.42 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

TP5335_V01

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件:382.42 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

TP5335K1

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件:434.9 Kbytes 页数:2 Pages

SUTEX

TP5335K1-G

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件:382.42 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

TP5335K1-G-VAO

P-Channel Enhancement-Mode Vertical DMOS FET

General Description The TP5335 is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

文件:382.42 Kbytes 页数:14 Pages

MICROCHIP

微芯科技

TP5335NW

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件:434.9 Kbytes 页数:2 Pages

SUTEX

TP53A

MINIATURE CERAMIC SMD OSCILLATOR (5.0 x 3.2 x 1.3mm)

FEATURES • Available with output frequency from 10M~1.5GHz • High reliability and low aging • Available CMOS,LVDS, and LVPECL outputs • 3.3V and 2.5V supply options APPLICATIONS • SONET • Ethernet • Storage Area Network • Microprocessors / DSP / FPGA • Broadband Access • Industrial Co

文件:417.87 Kbytes 页数:2 Pages

TRANSKO

晶体管资料

  • 型号:

    TP5135

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

  • 封装形式:

  • 极限工作电压:

    30V

  • 最大电流允许值:

    0.5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

  • 可代换的型号:

    3DK4A,

  • 最大耗散功率:

    0.625W

  • 放大倍数:

  • 图片代号:

    NO

  • vtest:

    30

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.625

技术参数

  • VBR.MIN(V):

    11.10

  • VBR.MAX(V):

    12.30

  • IT(mA):

    1

  • IR(μA):

    5

  • VRWM(V):

    10.0

  • IPP(A):

    294.12

  • VC(V):

    17.0

供应商型号品牌批号封装库存备注价格
NS
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
Supertex
23+
SOT-23
6000
绝对全新进口原装正品,货期4-7天
询价
NS
93+
SOP24
2760
全新原装进口自己库存优势
询价
NS
00+/01+
DIP16
184
全新原装100真实现货供应
询价
NS
04+
2000
询价
IC+
23+
QFP-100
2500
绝对全新原装!现货!特价!请放心订购!
询价
TOSHIBA
11+
DIP8
8000
全新原装,绝对正品现货供应
询价
NSC
25+
DIP
1800
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
nsc
25+
DIP
18000
原厂直接发货进口原装
询价
TTOPRO
17+
DIP
6200
100%原装正品现货
询价
更多TP5供应商 更新时间2026-1-19 16:09:00