TO-220FP is a full pack version of TO-220

FEATURES Cu clip interconnect for better heat dissipation efficiency Mounted package height reduced by 2.8 mm vs. standard TO-220NIS Turnkey with test and packing services Green materials: Pb-free plating & halogen-free mold compound Applications TO-220FP is suitable for medium to high

文件：821.99 Kbytes 页数：2 Pages

amkor

安靠科技

TRANSISTOR OUTLINE PACKAGE

TRANSISTOR OUTLINE PACKAGE Weight: 2.04g TO-220FP

文件：47.52 Kbytes 页数：2 Pages

STMICROELECTRONICS

意法半导体

High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

Low Loss and Soft Recovery High Performance Schottky Diode Common Cathode Features / Advantages: ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low

文件：109.64 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial appl

文件：1.5792 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：4.59248 Mbytes 页数：10 Pages

KERSEMI

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

文件：4.86112 Mbytes 页数：10 Pages

KERSEMI

TO-220F BIPOLAR TRANSISTORS

BlueRocket

蓝箭电子

丝印：TO-220FL；HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

Features - Low Drain-Source ON Resistance : RDS (ON) = 3.0 (Typ.) - High Forward Transfer Admittance : [Yfs=1.5S (Typ.) - Low Leakage Current IDSS=300μA (Max.) @VDS-600V - Enhancement-Mode : Vth=2.0-4.0V @VDS=10V, ID=1mA

文件：668.81 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：TO-220FJD-3L；Package：P14N65FJD；14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super

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SILAN

士兰微

N-Channel Power Field Effect Transistor

HSMC

华昕