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TO-220F

Plastic-Encapsulate MOSFETS

文件:920.05 Kbytes 页数:3 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-220F

Plastic-Encapsulate MOSFETS

文件:343.15 Kbytes 页数:2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-220F

Plastic-Encapsulate MOSFETS

文件:513.25 Kbytes 页数:2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-220F

Plastic-Encapsulate MOSFETS

文件:581.68 Kbytes 页数:2 Pages

ZPSEMIZP Semiconductor

至尚臻品

TO-220F

TO-220F BIPOLAR TRANSISTORS

文件:58.46 Kbytes 页数:1 Pages

FOSHAN

蓝箭电子

NCE07TD60BF

丝印:TO-220F;Package:NCE07TD60BF;600V, 7A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件:1.115 Mbytes 页数:9 Pages

NCEPOWER

新洁能

NCE10TD60BF

丝印:TO-220F;Package:NCE10TD60BF;600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat)

文件:682.28 Kbytes 页数:10 Pages

NCEPOWER

新洁能

NCE10TD60BF

丝印:TO-220F;Package:NCE10TD60BF;600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat)

文件:682.28 Kbytes 页数:10 Pages

NCEPOWER

新洁能

NCE10TD60BF

丝印:TO-220F;Package:NCE10TD60BF;600V, 10A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat)

文件:682.27 Kbytes 页数:10 Pages

NCEPOWER

新洁能

NCE15TD60BF

丝印:TO-220F;Package:NCE15TD60BF;600V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件:1.17167 Mbytes 页数:9 Pages

NCEPOWER

新洁能

详细参数

  • 型号:

    TO-220F

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    Discrete Products

供应商型号品牌批号封装库存备注价格
24+/25+
0
原装正品现货库存价优
询价
TOSHIBA
TO-220F
50000
询价
ST
25+
原厂原封
16900
原装,请咨询
询价
ST
2511
原厂原封
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
ST
26+
NA
60000
只有原装 可配单
询价
IR
22+
TO-252
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-252
8000
只做原装现货
询价
I
25+
TO-252
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RFMD
23+
To-5
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
POWER
22+
TO220
10000
原装现货库存.价格优势
询价
更多TO-220F供应商 更新时间2025-12-24 18:35:00