丝印：TO-220F；Package：NCE15TD65BF；650V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

文件：1.12226 Mbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：TO-220F；Package：NCE20TD60BF；600V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

文件：1.20345 Mbytes 页数：9 Pages

NCEPOWER

新洁能

丝印：TO-220F；Package：NCE20TH60BF；600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

文件：587.77 Kbytes 页数：8 Pages

NCEPOWER

新洁能

丝印：TO-220F；Package：NCE3N150F；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

文件：613.32 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-220F；Package：NCE3N170F；N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

文件：629.76 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：TO-220F；Package：HMS29N65F；N-Channel Super Junction Power MOSFET ?

文件：1.01084 Mbytes 页数：9 Pages

HMSEMI

华之美半导体

Thru-hole Fully Isolated Plastic Package

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342

文件：233.33 Kbytes 页数：5 Pages

CDIL

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR Low Freq. Power Amp. Built in Damper Diode Complementry CSB1342

文件：92.7 Kbytes 页数：3 Pages

CDIL

8&16 Amp Schottky Rectifiers

Rectifiers, Schottky 8.0 to 16 Amperes 40 to 100 Volts Rectifiers, Ultra Fast 8.0 to 16 Amperes 200 to 800 Volts Features • Fully isolated tab eliminates need for additional insulation on circuit board. • Available in both single and dual (common cathode) configurations. • Also available

文件：519.539 Kbytes 页数：2 Pages

Central

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

文件：71.89 Kbytes 页数：6 Pages

HSMC

华昕