SVSP14N65FJDD2中文资料士兰微数据手册PDF规格书

厂商型号	SVSP14N65FJDD2
功能描述	14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
丝印标识	TO-220FJD-3L
封装外壳	P14N65FJD
文件大小	308.04 Kbytes
页面数量	9 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 10:23:00
人工找货	SVSP14N65FJDD2价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses. It leads the

design engineers to their power converters with high efficiency, high

power density, and superior thermal behavior. Furthermore, it’s

universal applicable, i.e., suitable for hard and soft switching

topologies.

FEATURES

 14A,650V, RDS(on)(typ.)=0.26@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability