丝印：TK11P65W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA)

文件：245.99 Kbytes 页数：10 Pages

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丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：319.86 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 11.1 A \nPower Dissipation PD 100 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

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TO-220

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TO-220-3

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