POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Power Darlingtons for Linear and Switching Applications

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：28.13 Kbytes 页数：2 Pages

boca

博卡

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V(Min.)

文件：222.88 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

PNP Epitaxial Darlington Transistor

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

文件：168.58 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Medium Power Linear Switching Applications

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

文件：45.71 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Darlington Transistors

■ Features ● Collector Current Capability ICM=-5A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors

文件：4.49309 Mbytes 页数：2 Pages

TUOFENG

拓锋半导体

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.46806 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

PNP Transistor Bare Die

Features: Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：210.67 Kbytes 页数：2 Pages

SS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：53.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体