Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：243.33 Kbytes 页数：4 Pages

TAITRON

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are TIP127 respectively.

文件：92.82 Kbytes 页数：1 Pages

TGS

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

文件：65.16 Kbytes 页数：1 Pages

WINGS

永盛电子

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：555.16 Kbytes 页数：3 Pages

JIANGSU

长电科技

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：105.7 Kbytes 页数：6 Pages

POINN

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

文件：100.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件：510.76 Kbytes 页数：5 Pages

TAI-SAW

嘉硕科技

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件：510.76 Kbytes 页数：5 Pages

SEMIHOW

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

文件：132.52 Kbytes 页数：4 Pages

SAVANTIC