NPN Silicon Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Darlington configuration in Jedec TO-220 package • The complementary PNP types are the TIP127 respectively. • Epoxy me

文件：359.12 Kbytes 页数：2 Pages

MCC

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

文件：213.99 Kbytes 页数：3 Pages

CDIL

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Complement to TIP127F. Applications Medium power linear switching applications.

文件：979.48 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors

文件：188.01 Kbytes 页数：2 Pages

FS

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.8236 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

文件：138.01 Kbytes 页数：2 Pages

TEL

东电电子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：29.78 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented

文件：279.56 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A • Complement to Type TIP127FP APPLICATIONS • Designed for general purpo

文件：149.72 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented

文件：279.56 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体