Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

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SEMIHOW

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：127.43 Kbytes 页数：4 Pages

SAVANTIC

ThinkiSemi mature NPN Epitaxial Darlington Transistor

Features ※ Complementary to TIP125/TIP126/TIP127 ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Medium Power Linear Switching Applications ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Dat

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THINKISEMI

思祁半导体

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.46806 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

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STMICROELECTRONICS

意法半导体

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors

文件：188.01 Kbytes 页数：2 Pages

FS

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.8236 Mbytes 页数：3 Pages

JIANGSU

长电科技

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件：321.48 Kbytes 页数：4 Pages

CDIL