DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉

BASE NPN / PNP

EPITAXIAL BASE NPN / PNP POWER DARLINGTONS

文件：810.29 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PNP/NPN Silicon Power Transistor

FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP)

文件：768.39 Kbytes 页数：3 Pages

WEITRON

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

文件：1.13386 Mbytes 页数：5 Pages

MULTICOMP

易络盟

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：185.5 Kbytes 页数：4 Pages

ISC

无锡固电

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：555.16 Kbytes 页数：3 Pages

JIANGSU

长电科技

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

文件：100.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：127.43 Kbytes 页数：4 Pages

SAVANTIC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

文件：501.58 Kbytes 页数：5 Pages

SEMIHOW