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TIP111

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

文件:49.25 Kbytes 页数:4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP111

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件:269.51 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

TIP111

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

文件:153.15 Kbytes 页数:3 Pages

boca

博卡

TIP111

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

文件:271.16 Kbytes 页数:3 Pages

CDIL

TIP111

Silicon Power darlington Complementary transistors

文件:97.94 Kbytes 页数:2 Pages

Central

TIP111

POWER TRANSISTORS(2.0A,60-100V,50W)

文件:146.97 Kbytes 页数:3 Pages

MOSPEC

统懋

TIP111

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件:269.51 Kbytes 页数:6 Pages

Motorola

摩托罗拉

TIP111

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

文件:103.57 Kbytes 页数:3 Pages

COMSET

TIP111

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

文件:175 Kbytes 页数:4 Pages

ISC

无锡固电

TIP111

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

文件:99.23 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

产品属性

  • 产品编号:

    TIP111

  • 制造商:

    Central Semiconductor Corp

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    2.5V @ 8mA,2A

  • 电流 - 集电极截止(最大值):

    2mA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    1000 @ 1A,4V

  • 频率 - 跃迁:

    25MHz

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    TRANS NPN DARL 80V 2A TO220-3

供应商型号品牌批号封装库存备注价格
FAIRCHILD
24+
TO220
5000
原厂授权代理 价格绝对优势
询价
PHI
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
MOT
05+
原厂原装
4425
只做全新原装真实现货供应
询价
24+
TO-220
10000
全新
询价
ST/进口原
17+
TO-220
6200
询价
ST
16+
TO-220
10000
全新原装现货
询价
SOLID
824
全新原装 货期两周
询价
FSC/ON
23+
原包装原封 □□
8575
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
ST/意法
24+
65230
询价
更多TIP111供应商 更新时间2025-10-5 11:16:00