EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), ᷤVCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Complementary to TIP117.

文件：74.82 Kbytes 页数：2 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Silicon Power darlington Complementary transistors

文件：97.94 Kbytes 页数：2 Pages

CENTRAL

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

文件：99.23 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A

文件：101.68 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

文件：122.78 Kbytes 页数：4 Pages

SAVANTIC

Darlington Power Transistors (NPN)

Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：194.09 Kbytes 页数：4 Pages

TAITRON

NPN Transistor Bare Die

Features Collector current up to 2A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：214.04 Kbytes 页数：2 Pages

SS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. ■ STMicroe

文件：72.23 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

丝印：TIP112；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use

文件：1.41633 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP117. Applications Medium power linear switching applications.

文件：1.25135 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子