PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

文件：550.61 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

文件：49.25 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件：269.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

文件：153.15 Kbytes 页数：3 Pages

boca

博卡

Silicon Power darlington Complementary transistors

文件：97.94 Kbytes 页数：2 Pages

Central

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

文件：271.16 Kbytes 页数：3 Pages

CDIL

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

文件：149.35 Kbytes 页数：2 Pages

MCC

POWER TRANSISTORS(2.0A,60-100V,50W)

文件：146.97 Kbytes 页数：3 Pages

MOSPEC

统懋

Darlington Transistor

Description: Designed for general-purpose amplifier and low speed switching applications. Features: • Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.) - TIP110, TIP115 • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Max.) at IC = 2A • Monolithic construction with built-

文件：683.35 Kbytes 页数：4 Pages

MULTICOMP

易络盟

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

文件：103.57 Kbytes 页数：3 Pages

COMSET