| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) − 文件:218.99 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP100-101-102 Compliance to RoHS. 文件:102.96 Kbytes 页数:3 Pages | COMSET | COMSET | ||
isc Silicon PNP Power Transistor DESCRIPTION ·Low saturation voltage. ·High reliability ·High breakdown voltage APPLICATIONS ·High-Voltage Switching 文件:245.7 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS 8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP 文件:97.95 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A 文件:152.94 Kbytes 页数:6 Pages | POINN | POINN | ||
Silicon PNP Darlington Power Transistors DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use 文件:93.61 Kbytes 页数:3 Pages | SAVANTIC | SAVANTIC | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP100/101/102 文件:750.33 Kbytes 页数:5 Pages | SEMIHOW | SEMIHOW | ||
Darlington Power Transistors (PNP) Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant 文件:241.38 Kbytes 页数:4 Pages | TAITRON | TAITRON | ||
PNP SILICON POWER DARLINGTONS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP 文件:763.31 Kbytes 页数:5 Pages | TRSYS Transys Electronics | TRSYS | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. ■ STMicroelectro 文件:35.19 Kbytes 页数:4 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
开关管 (S)_功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
300V
- 最大电流允许值:
2.5A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
2
- 可代换的型号:
BU126,BU211,BUY23A,BUY75,3DK305G,
- 最大耗散功率:
65W
- 放大倍数:
- 图片代号:
E-44
- vtest:
300
- htest:
999900
- atest:
2.5
- wtest:
65
技术参数
- Pb-free:
Pb
- Status:
Active
- Polarity:
NPN
- IC Continuous (A):
8
- V(BR)CEO Min (V):
60
- VCE(sat) Max (V):
2
- hFE Min (k):
1
- hFE Max (k):
20
- fT Min (MHz):
4
- Package Type:
TO-220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
DIP |
43 |
原装现货假一罚十 |
询价 | ||
ST/意法半导体 |
25 |
TO-247-3 |
6000 |
原装正品 |
询价 | ||
ON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
on |
23+ |
TO220 |
1200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
ST |
1824+ |
TO-220 |
4000 |
原装现货专业代理,可以代拷程序 |
询价 | ||
ISC |
20+ |
TO-220 |
15800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHI |
24+ |
TO220 |
598000 |
原装现货假一赔十 |
询价 | ||
ST |
20+ |
TO-220 |
26580 |
全新原装长期特价销售 |
询价 | ||
GME |
2022+ |
4250 |
全新原装 货期两周 |
询价 | |||
FAIRCHILD |
25+ |
397 |
公司优势库存 热卖中! |
询价 |
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