TIOL112X

TIOL112andTIOL112xIO-LinkDeviceTransceiverswithLowResidualVoltageandIntegratedSurgeProtectioninSmallPackages

1Features •7-Vto36-Vsupplyvoltage •PNP,NPNorIO-Linkconfigurableoutput –IEC61131-9COM1,COM2andCOM3Data RateSupport •Functionalsafety-capable –Documentationavailabletoaidinfunctional safetysystemdesign •Pin-compatiblewithTIOL111(x)withimproved performance

TIOL112YAHR

TIOL112andTIOL112xIO-LinkDeviceTransceiverswithLowResidualVoltageandIntegratedSurgeProtectioninSmallPackages

1Features •7-Vto36-Vsupplyvoltage •PNP,NPNorIO-Linkconfigurableoutput –IEC61131-9COM1,COM2andCOM3Data RateSupport •Functionalsafety-capable –Documentationavailabletoaidinfunctional safetysystemdesign •Pin-compatiblewithTIOL111(x)withimproved performance

TIP112

EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),ᷤVCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •ComplementarytoTIP117.

TIP112

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

TIP112

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

TIP112

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP112

POWERTRANSISTORS(2.0A,60-100V,50W)

TIP112

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

TIP112

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)