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TIOL112YAHR

Marking:TL112;Package:DSBGA;TIOL112 and TIOL112x IO-Link Device Transceivers with Low Residual Voltage and Integrated Surge Protection in Small Packages

1Features •7-Vto36-Vsupplyvoltage •PNP,NPNorIO-Linkconfigurableoutput –IEC61131-9COM1,COM2andCOM3Data RateSupport •Functionalsafety-capable –Documentationavailabletoaidinfunctional safetysystemdesign •Pin-compatiblewithTIOL111(x)withimproved performance

TITexas Instruments

德州仪器美国德州仪器公司

TIP112

EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),ᷤVCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •ComplementarytoTIP117.

KECKEC CORPORATION

KEC株式会社

TIP112

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP112

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

bocaBoca Semiconductor Corporation

博卡博卡半导体公司

TIP112

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TIP112

POWERTRANSISTORS(2.0A,60-100V,50W)

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

TIP112

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

POINN

Power Innovations Ltd

TIP112

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

TIP112

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications.

DCCOM

Dc Components

供应商型号品牌批号封装库存备注价格
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
11000
询价
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
询价
24+
400
真实现货库存
询价
2000
原装现货
询价
BB现货
SOP-8
3200
原装长期供货!
询价
BB
25+23+
SOP-8
17694
绝对原装正品全新进口深圳现货
询价
BB
1709+
SOP8
17500
普通
询价
BB
23+
SOP-8
3000
原装正品假一罚百!可开增票!
询价
更多TIOL112YAHR供应商 更新时间2025-7-12 15:35:00