TGF2957中文资料DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT数据手册Qorvo规格书

描述 Description

Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.
Lead-free and RoHS compliant.

特性 Features

• Frequency range: DC - 12 GHz

• 48.6dBm nominal Psat at 3 GHz

• 69.6% maximum PAE at 3 GHz

• 19.2dB nominal power gain at 3 GHz

• Bias: Vd = 32V, Idq = 250mA

• Chip dimensions: 0.82 x 3.66 x 0.10 mm

应用 Application

• Broadband Amplifiers
• High Efficiency Power Amplifiers
• Marine Radar
• Military Communications
• Point-to-point Communications
• Satellite Communications (Satcom)