AO6403

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Available •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitch

AO6403

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.Itmaybeusedincommon-drainconfigurationtoformabidirectionalblockingswitch.AO6403isPb

AO6403

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-6A(VGS=-10V) ●RDS(ON)

AO6403

30VP-ChannelMOSFET

AO6403-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-6A(VGS=-10V) ●RDS(ON)

AO6403L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO6403usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.Itmaybeusedincommon-drainconfigurationtoformabidirectionalblockingswitch.AO6403isPb

AON6403

30VP-ChannelMOSFET

AON6403L

P-ChannelPowerTransistor

GeneralDescription TheAON6403LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree ProductSummary VDS-30V ID(atVGS=-10

BOXER-6403

lowpowerconsumptioncpu

BTS6403U

Widebandhighgainhighlinearitypre-driveramplifier2.3GHz-4.2GHz

description TheBTS6403Uisawideband,highgain,highlinearitypre-driveramplifierfor5GmassiveMIMOinfrastructure applications,withfaston-offswitchingtosupportTDDsystems.TheBTS6403Uisdesignedtooperatebetween 2.3GHzand4.2GHz.TheBTS6403Uishousedina3mmx3mmx0