P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-6 A (VGS =-10V) ● RDS(ON)

文件：2.54477 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration to form a bidirectional blocking switch. AO6403 is Pb

文件：114.21 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V P-Channel MOSFET

文件：237.24 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Power Transistor

General Description The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. - RoHS Compliant - Halogen Free Product Summary VDS -30V ID (at VGS= -10

文件：240.23 Kbytes 页数：6 Pages

AOSMD

万国半导体