丝印：TA；Package：SOT353-1；2-input NAND gate

1. General description The 74HC1G00; 74HCT1G00 is a single 2-input NAND gate. Inputs include clamp diodes . This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • CMOS low

文件：206.97 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：TA；Package：SOT353-1；2-input NAND gate

1. General description The 74HC1G00-Q100; 74HCT1G00-Q100 is a single 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC)

文件：205.7 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：TA；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：TA；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：TA；Package：SSOP5；Voltage Detector IC built in Delay Citcuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：222.67 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：TA；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits  Low noise

文件：309.76 Kbytes 页数：22 Pages

恩XP

丝印：TA；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  40 W  Wide working

文件：988.38 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：TA；Package：SOD323F；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 100 W for types ≤ 6.8 V • Non-repetitive peak reverse power dissipation

文件：310.63 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：TA；Package：X3-DFN0603-2；LOW CAPACITANCE UNIDIRECTIONAL TVS DIODE

Features  Ultra-Small, Low Profile Leadless Surface Mount Package (0.6mm * 0.3mm * 0.3mm)  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±15kV, Contact ±8kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 

文件：430.23 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：TA；Package：PG-WHTFN-9；MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)

文件：857.38 Kbytes 页数：12 Pages

Infineon

英飞凌