丝印：TA115E；Package：SOT-54；PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Re

文件：93.83 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：TA115E；Package：SOT-54；PNP resistor-equipped transistors; R1 = 100 k廓, R2 = 100 k廓

DESCRIPTION PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

文件：189.96 Kbytes 页数：14 Pages

恩XP

丝印：TA115E；Package：SC-43；PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：422.65 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司