丝印：TA；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits  Low noise

文件：309.76 Kbytes 页数：22 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) ·Complement to Type BFU520 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.

文件：302.81 Kbytes 页数：3 Pages

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无锡固电

NPN Wideband Silicon RF Transistor

DESCRIPTION ·Low Noise and High Gain NF = 1.8 dB TYP @VCE = 10 V, IC = 10 mA, f = 0.9 GHz ·High Power Gain MAG = 9 dB TYP. @VCE = 8 V, IC = 40 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Applications Requiring High Su

文件：255.16 Kbytes 页数：3 Pages

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无锡固电

NPN宽带硅RF晶体管

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pindual-emitter SOT143B package.\nThe BFU520 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz. • Low noise, high breakdown RF transistor\n•AEC-Q101 qualified\n• Minimum noise figure (NFmin) = 0.65 dB at 900 MHz\n• Maximum stable gain 20 dB at 900 MHz\n• 11 GHz fT silicon technology;

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NPN wideband silicon RF transistor

文件：309.76 Kbytes 页数：22 Pages

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飞利浦

丝印：HZ*；Package：SOT23；NPN wideband silicon RF transistor

文件：299.45 Kbytes 页数：22 Pages

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NPN wideband silicon RF transistor

文件：299.45 Kbytes 页数：22 Pages

PHI

飞利浦

丝印：ZA*；Package：SOT323；NPN wideband silicon RF transistor

文件：302.08 Kbytes 页数：22 Pages

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NPN wideband silicon RF transistor

文件：302.08 Kbytes 页数：22 Pages

PHI

飞利浦

NPN wideband silicon RF transistor

文件：306.64 Kbytes 页数：22 Pages

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