64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

文件：162.76 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

文件：162.76 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 32 SRAM???

GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM inte

文件：162.76 Kbytes 页数：16 Pages

TMT

凯钰科技

64K x 32 SRAM

GENERAL DESCRIPTION\nThe Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.\nThe T35L6432B SRAM integrates • Fast Access times: 9 / 10 / 11 / 12 ns\n• Single 3.3V (+0.3V/-0.165V) power supply\n• Common data inputs and data outputs\n• Individual BYTE WRITE ENABLE and GLOBAL WRITE control\n• Three chip enables for depth expansion and address pipelining\n• Clock-controlled and registered address, data I/Os ;

TM

天微

64K x 32 SRAM

TM

天微