T35L6464A-5Q数据表ic资料市场行情凯钰科技-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
T35L6464A-5Q	文件：160.84 Kbytes Page：16 Pages	64K x 64 SRAM??? GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti 文件：160.84 Kbytes 页数：16 Pages	TMT 凯钰科技	TMT
T35L6464A-5L	文件：160.84 Kbytes Page：16 Pages	64K x 64 SRAM??? GENERAL DESCRIPTION The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. FEATURES • Fast Access ti 文件：160.84 Kbytes 页数：16 Pages	TMT 凯钰科技	TMT
T3900	文件：0 bytes Page：0 Pages	BGA	TECHNOLOGY 上传：深圳市宝隆宏业科技有限公司	TECHNOLOGY
T399A475K006AS	文件：0 bytes Page：0 Pages	DIP	KEMET/基美上传：深圳市河锋鑫科技有限公司	KEMET/基美
T399J107K010AS	文件：0 bytes Page：0 Pages	DIP	KEMET/基美上传：深圳市河锋鑫科技有限公司	KEMET/基美

更多T35L6464A-5Q供应商更新时间2025-11-24 16:30:00