T35L6432B-12T中文资料凯钰科技数据手册PDF规格书

GENERAL DESCRIPTION

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors.

The T35L6432B SRAM integrates 65536 x 32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation.

FEATURES

• Fast Access times: 9 / 10 / 11 / 12 ns

• Single 3.3V (+0.3V/-0.165V) power supply

• Common data inputs and data outputs

• Individual BYTE WRITE ENABLE and GLOBAL WRITE control

• Three chip enables for depth expansion and address pipelining

• Clock-controlled and registered address, data I/Os and control signals

• Internally self-timed WRITE CYCLE

• Burst control pins ( interleaved or linear burst sequence)

• High 30pF output drive capability at rated access time

• SNOOZE MODE for reduced power standby

• Burst Sequence :

- Interleaved (MODE=NC or VCC)

- Linear (MODE=GND)